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1

Electronic structure of copper-rich copper-gold alloys

Asonen, H., Barnes, C. J., Pessa, M., Rao, R. S., Bansil, A.

Journal:

Physical Review B

Year:

1985

Language:

english

File:

PDF, 341 KB

english, 1985

2

Electronic structure of copper-rich copper-palladium alloys

Rao, R. S., Bansil, A., Asonen, H., Pessa, M.

Journal:

Physical Review B

Year:

1984

Language:

english

File:

PDF, 678 KB

english, 1984

3

A Ga0.51In0.49P/GaAs-based photovoltaic converter for two-directional optical power and data transmission

K. Vänttinen, J. Lammasniemi, K. Rakennus, H. Asonen, R. Jurva, P. Karioja

Journal:

Progress in Photovoltaics: Research and Applications

Year:

1995

Language:

english

File:

PDF, 379 KB

english, 1995

4

High-power operation of aluminum-free ( kappa =0.98 mu m) pump laser for erbium-doped fiber amplifier

Asonen, H., Nappi, J., Ovtchinnikov, A., Savolainen, P., Zhang, G., Ries, R., Pessa, M.

Journal:

IEEE Photonics Technology Letters

Year:

1993

Language:

english

File:

PDF, 320 KB

english, 1993

5

Tensile-strained GaAsP/GaInAsP/GaInP quantum well lasers

Guodong Zhang, Nappi, J., Asonen, H., Pessa, M.

Journal:

IEEE Photonics Technology Letters

Year:

1994

Language:

english

File:

PDF, 318 KB

english, 1994

6

High-performance 980-nm strained-layer GaInAs-GaInAsP-GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy

Savolainen, P., Toivonen, M., Asonen, H., Pessa, M., Murison, R.

Journal:

IEEE Photonics Technology Letters

Year:

1996

Language:

english

File:

PDF, 285 KB

english, 1996

7

: Bulk and surface electronic structure of the alloy

Asonen, H., Lindroos, M., Pessa, M., Prasad, R., Rao, R. S., Bansil, A.

Journal:

Physical Review B

Year:

1982

Language:

english

File:

PDF, 1.25 MB

english, 1982

8

band metals. IX. Triangulation analysis of angle-resolved data on copper

Pessa, M., Lindroos, M., Asonen, H., Smith, N. V.

Journal:

Physical Review B

Year:

1982

Language:

english

File:

PDF, 331 KB

english, 1982

9

P grown by molecular-beam epitaxy

Mäkinen, J., Laine, T., Partanen, J., Saarinen, K., Hautojärvi, P., Tappura, K., Hakkarainen, T., Asonen, H., Pessa, M., Kauppinen, J. P., Vänttinen, K., Paalanen, M. A., Likonen, J.

Journal:

Physical Review B

Year:

1996

Language:

english

File:

PDF, 200 KB

english, 1996

10

[IEEE Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference - Nara, Japan (4-8 Oct. 1998)] Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130) - Tensile-strained single quantum well 808 nm lasers with Al-free active regions and InGaAlP cladding layers grown by solid source MBE

Nabiev, R.F., Aarik, J., Asonen, H., Bournes, P., Corvini, P., Fang, F., Finander, M., Jansen, M., Nappi, J., Rakennus, K., Salokatve, A.

Year:

1998

Language:

english

File:

PDF, 152 KB

english, 1998

11

[IEEE 13th IEEE International Semiconductor Laser Conference - Kagazwa, Japan (Sept. 21-25, 1992)] 13th IEEE International Semiconductor Laser Conference - Characteristics of InGaAs/GaAs/GaInP quantum well lasers grown by gas-source molecular-beam epitaxy

Zhang, G., Outchinnikov, A., Nappi, J., Asonen, H., Pessa, M.

Year:

1992

Language:

english

File:

PDF, 151 KB

english, 1992

12

Growth of ZnSe films on GaAs 〈100〉 substrates by conventional and pulsed molecular beam epitaxy

Jarmo Lilja, Jari Keskinen, Harry Asonen, Markus Pessa

Journal:

Journal of Crystal Growth

Year:

1989

Language:

english

File:

PDF, 283 KB

english, 1989

13

Growth of InP, InGaAs, and InGaAsP on InP by gas-source molecular beam epitaxy

H. Asonen, K. Rakennus, K. Tappura, M. Hovinen, M. Pessa

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 396 KB

english, 1990

14

The substrate—epitaxial interface of GaAs and InP grown by GSMBE

K. Tappura, A. Salokatve, K. Rakennus, H. Asonen, M. Pessa

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 113 KB

english, 1991

15

Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy

K. Rakennus, K. Tappura, T. Hakkarainen, H. Asonen, R. Laiho, S.J. Rolfe, J.J. Dubowski

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 398 KB

english, 1991

16

The influence of growth conditions on the composition of GaInAsP grown by gas-source molecular beam epitaxy

K. Tappura, T. Hakkarainen, K. Rakennus, M. Hovinen, H. Asonen

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 462 KB

english, 1991

17

Temperature dependency of the composition of GaInAsP grown by GSMBE

K. Tappura, T. Hakkarainen, K. Rakennus, H. Asonen

Journal:

Journal of Crystal Growth

Year:

1992

Language:

english

File:

PDF, 383 KB

english, 1992

18

Low dark current In0.53Ga0.47As/InP SAM avalanche photodiodes grown by gas-source MBE

G. Zhang, T. Hakkarainen, K. Rakennus, K. Tappura, H. Asonen, M. Pessa

Journal:

Journal of Crystal Growth

Year:

1992

Language:

english

File:

PDF, 398 KB

english, 1992

19

Growth of Ga0.29In0.71As0.61P0.39 (λ ≈ 1.3 μm) on InP by gas source molecular beam epitaxy

K. Tappura, H. Asonen

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 362 KB

english, 1993

20

GSMBE growth of GaInAsP on GaAs substrates and its application to 0.98 μm lasers

G. Zhang, A. Ovtchinnikov, J. Näppi, T. Hakkarainen, H. Asonen

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 275 KB

english, 1993

21

Experimental determination of electronic band structure and photoemission of Pd

H. Asonen, M. Lindroos, M. Pessa, N. Dahlbäck

Journal:

Solid State Communications

Year:

1980

Language:

english

File:

PDF, 375 KB

english, 1980

22

An absolute determination of the electronic band structure of the Cu(001) mirror plane

M. Lindroos, H. Asonen, M. Pessa, N.V. Smith

Journal:

Solid State Communications

Year:

1981

Language:

english

File:

PDF, 268 KB

english, 1981

23

Photoemission from a CuAl binary alloy

M Pessa, H Asonen, A Bansil

Journal:

Year:

1981

Language:

english

File:

PDF, 28 KB

english, 1981

24

Surface electronic states in alloys: copper-aluminum

M. Pessa, H. Asonen, R.S. Rao, R. Prasad, A. Bansil

Journal:

Surface Science Letters

Year:

1982

Language:

english

File:

PDF, 61 KB

english, 1982

25

The effect of interdiffusion on the growth mode of copper on Al{111}

H. Asonen, C.J. Barnes, A. Salokatve, M. Pessa

Journal:

Surface Science Letters

Year:

1985

Language:

english

File:

PDF, 47 KB

english, 1985

26

Interpretation of a new feature in photoemission from Cu based alloys with polyvalent solutes

H. Asonen, M. Pessa, R.S. Rao, A. Bansil

Journal:

Surface Science Letters

Year:

1985

Language:

english

File:

PDF, 101 KB

english, 1985

27

Growth mode and electronic structure of copper films on aluminium substrates

C.J. Barnes, H. Asonen, A. Salokatve, M. Pessa

Journal:

Surface Science Letters

Year:

1987

Language:

english

File:

PDF, 64 KB

english, 1987

28

The growth mode of Cu overlayers on Pd(100)

H. Asonen, C. Barnes, A. Salokatve, A. Vuoristo

Journal:

Applications of Surface Science

Year:

1985

Language:

english

File:

PDF, 695 KB

english, 1985

29

Photoemission from a metallic superlattice

A. Salokatve, H. Asonen, R. Pankaluoto, R.S. Rao, M. Pessa

Journal:

Superlattices and Microstructures

Year:

1986

Language:

english

File:

PDF, 379 KB

english, 1986

30

Aluminium-free 980 nm laser diodes

M. Pessa, J. Näppi, G. Zhang, A. Ovtchinnikov, H. Asonen

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 615 KB

english, 1993

31

Compound semiconductor activities in Finland

Markus Pessa, Harry Asonen

Journal:

Euro III-Vs Review

Year:

1990

Language:

english

File:

PDF, 401 KB

english, 1990

32

Solid-source MBE for growth of laser diode materials

Mika Toivonen, Pekka Savolainen, Harry Asonen, Markus Pessa

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 437 KB

english, 1997

33

A comparative study of molecular beam epitaxy methods

M. Pessa, H. Asonen, J. Varrio, A. Salokatve

Journal:

physica status solidi (a)

Year:

1989

Language:

english

File:

PDF, 864 KB

english, 1989

34

Optimization and characteristics of Al-free strained-layer InGaAs/GaInAsP/GaInP SCH-QW lasers (λ~980 nm) grown by gas-source MBE

Zhang, G., Ovtchinnokov, A., Nappi, J., Asonen, H., Pessa, M.

Journal:

IEEE Journal of Quantum Electronics

Year:

1993

Language:

english

File:

PDF, 784 KB

english, 1993

35

Aluminum-free 980-nm GaInAs/GaInAsP/GaInP pump lasers

Asonen, H., Ovtchinnikov, A., Guodong Zhang, Nappi, J., Savolainen, P., Pessa, M.

Journal:

IEEE Journal of Quantum Electronics

Year:

1994

Language:

english

File:

PDF, 1.20 MB

english, 1994

36

Surface electronic states in alloys: Copper-aluminium

M. Pessa, H. Asonen, R.S. Rao, R. Prasad, A. Bansil

Journal:

Surface Science

Year:

1982

Language:

english

File:

PDF, 284 KB

english, 1982

37

The effect of interdiffusion on the growth mode of copper on Al{111}

H. Asonen, C.J. Barnes, A. Salokatve, M. Pessa

Journal:

Surface Science

Year:

1985

Language:

english

File:

PDF, 466 KB

english, 1985

38

Interpretation of a new feature in photoemission from Cu based alloys with polyvalent solutes

H. Asonen, M. Pessa, R.S. Rao, A. Bansil

Journal:

Surface Science

Year:

1985

Language:

english

File:

PDF, 730 KB

english, 1985

39

Growth mode and electronic structure of copper films on aluminium substrates

C.J. Barnes, H. Asonen, A. Salokatve, M. Pessa

Journal:

Surface Science

Year:

1987

Language:

english

File:

PDF, 1003 KB

english, 1987

40

[IEEE Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting - Orlando, FL, USA (1-4 Dec. 1998)] Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243) - Uncooled operation of 1.3 μm AlGaInAs/AlInAs/InP laser diodes grown by solid source molecular beam epitaxy

Savolainen, P., Toivonen, M., Orsila, S., Pessa, M., Salokatve, A., Asonen, H., Panarello, T., Murison, R.

Year:

1998

Language:

english

File:

PDF, 140 KB

english, 1998

41

[IEEE Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) - Davos, Switzerland (16-20 May 1999)] Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) - Solid source molecular beam epitaxy growth of low threshold and high temperature 1.3 μm AlGaInAs-AlInAs-InP laser diodes suitable for uncooled application

Savolainen, P., Toivonen, M., Melanen, P., Vilokkinen, V., Saarinen, M., Orsila, S., Kuuslahti, T., Salokatve, A., Asonen, H., Panarello, T., Murisonib, R., Pessa, M.

Year:

1999

Language:

english

File:

PDF, 395 KB

english, 1999

42

[IEEE Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting - San Francisco, CA, USA (10-13 Nov. 1997)] Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting - Low frequency electrical noise characteristics of broad area 808 nm semiconductor laser diodes

Morgan, J., Harrison, I., Dods, S.R.A., Andrianov, A.V., Orton, J.W., Larkins, E.C., Nagle, J., Asonen, H., Nappi, J., Esquivias, I., Arias, J.

Year:

1996

Language:

english

File:

PDF, 132 KB

english, 1996

43

[IEEE LEOS'94 - Boston, MA, USA (31 Oct.-3 Nov. 1994)] Proceedings of LEOS'94 - Reliability of aluminium-free 980 nm lasers

Asonen, H., Nappi, J., Savolainen, P., Ovtchinnikov, A.

Year:

1994

Language:

english

File:

PDF, 122 KB

english, 1994

44

High-gain, high-speed InP/InGaAs double-heterojunction bipolar transistors with a step-graded base-collector heterojunction

Willen, B., Westergren, U., Asonen, H.

Journal:

IEEE Electron Device Letters

Year:

1995

Language:

english

File:

PDF, 274 KB

english, 1995

45

[IEEE Third International Conference Indium Phosphide and Related Materials - Cardiff, UK (8-11 April 1991)] [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials - Growth of Be-doped InP by gas-source molecular beam epitaxy

Hakkarainen, T., Rakennus, K., Hovinen, M., Pessa, M., Asonen, H.

Year:

1991

Language:

english

File:

PDF, 292 KB

english, 1991

46

[IEEE Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9) - Louisville, KY, USA (10-14 May 1993)] Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9) - Characteristics of indium phosphide solar cells bonded on silicon

Lammasniemi, J., Rakennus, K., Asonen, H., Pessa, M.

Year:

1993

Language:

english

File:

PDF, 335 KB

english, 1993

47

[IEEE LEOS '93 - San Jose, CA, USA (15-18 Nov. 1993)] Proceedings of LEOS '93 - High-power GaInAs/GaInAsP/GaInP 980-nm pump lasers

Asonen, H., Outchinnikov, A., Zhang, G., Nappi, J., Savolainen, P., Pessa, M.

Year:

1993

Language:

english

File:

PDF, 121 KB

english, 1993

48

[IEEE 8th International Conference on Indium Phosphide and Related Materials - Schwabisch-Gmund, Germany (21-25 April 1996)] Proceedings of 8th International Conference on Indium Phosphide and Related Materials - Solid source MBE for phosphide-based devices

Toivonen, M., Salokatve, A., Tappura, K., Jalonen, M., Savolainen, P., Nappi, J., Pessa, M., Asonen, H.

Year:

1996

Language:

english

File:

PDF, 398 KB

english, 1996

49

Measurement of the ZnSe:MnSe:ZnSe heterojunction valence-band discontinuities

Asonen, H., Lilja, J., Vuoristo, A., Ishiko, M., Pessa, M.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 615 KB

english, 1987

50

New approach to growth of high-quality GaAs layers on Si substrates

Varrio, J., Asonen, H., Salokatve, A., Pessa, M., Rauhala, E., Keinonen, J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 682 KB

english, 1987

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